BSL316CH6327XTSA1 vs BSL215CH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL316CH6327XTSA1 disebabkan oleh Infineon dan BSL215CH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSL316CH6327XTSA1 BSL215CH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS small-signal complementary MOSFET —
Configuration Complementary pair (1 N-channel + 1 P-channel in one package) Half-bridge (1 N + 1 P)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel ID) 1.4 A —
Continuous Drain Current (P-channel ID) 1.5 A —
Total Power Dissipation (Ptot) 500 mW —
Kemasan PG-TSOP6-6 (TSOP6, 6-pin) —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) -55C to +150C
Technology OptiMOS low-voltage MOSFET OptiMOS trench MOSFET
Channel Type N-channel + P-channel (dual) —
Kiraan Pin 6 —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL level] 1 (unlimited)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Series — OptiMOS
FET Type — N-Channel and P-Channel Complementary Pair
Drain-Source Voltage (V_DS) — 20 V
Continuous Drain Current (I_D) — 1.5 A
R_DS(on) Max @ V_GS=4.5V — 250 mOhm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Power Dissipation (P_D) — 500 mW
Kemasan / Case — PG-TSOP6-6 (6-pin TSOP)
Lead-Free — Yes

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