BSL606SNH6327XTSA1 vs BSL207SPH6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSL606SNH6327XTSA1 dari Infineon dan BSL207SPH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSL606SNH6327XTSA1 BSL207SPH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET (Enhancement Mode) —
Technology OptiMOS3 trench MOSFET MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) 5.6 nC (max) —
Rentang Suhu Kerja -55C to +150C (Tj) —
Paket PG-TSOP6-6 (6-pin, SOT-23-6 compatible) TSOP-6 (PG-TSOP6-6)
Tipe Mounting Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant (Pb-free plating) Compliant
Level MSL 1 (per JEDEC J-STD-020) —
FET Type — P-Channel
Drain to Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) at 25C — 6 A (Ta)
Power Dissipation (PD) — 2 W (Ta)
RDS(on) Max @ VGS = -4.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-4.5V]
RDS(on) Max @ VGS = -2.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-2.5V]
Drive Voltage (Max RDS(on), Min RDS(on)) — 2.5 V, 4.5 V
Suhu Kerja — -55C to +150C
Series — OptiMOS™
Automotive Qualification — AEC-Q101
Jumlah Pin — 6

Spek dan Sumber

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