BSL606SNH6327XTSA1 vs BSL207SPH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSL606SNH6327XTSA1 disebabkan oleh Infineon dan BSL207SPH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSL207SPH6327XTSA1 BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 - P-CH 20V 6A OptiMOS MOSFET | Infineon

BSL207SPH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSL606SNH6327XTSA1 BSL207SPH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET (Enhancement Mode) —
Technology OptiMOS3 trench MOSFET MOSFET (Metal Oxide)
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Ta 4.5 A —
Static Drain-Source On-Resistance (RDS(on)) 60 mOhm (max, VGS = 10 V) —
Total Power Dissipation (PD) at Ta 2 W —
Gate-Source Voltage (VGS) +/-20 V (max) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) 5.6 nC (max) —
Gambaran Suhu Operasi -55C to +150C (Tj) —
Kemasan PG-TSOP6-6 (6-pin, SOT-23-6 compatible) TSOP-6 (PG-TSOP6-6)
Jenis Pemasangan Surface Mount Surface Mount
Qualification AEC-Q101 (Automotive) —
Status RoHS Compliant (Pb-free plating) Compliant
Aras MSL 1 (per JEDEC J-STD-020) —
FET Type — P-Channel
Drain to Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) at 25C — 6 A (Ta)
Power Dissipation (PD) — 2 W (Ta)
RDS(on) Max @ VGS = -4.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-4.5V]
RDS(on) Max @ VGS = -2.5 V — [DATA_NEEDED: RDS(on) max @ VGS=-2.5V]
Drive Voltage (Max RDS(on), Min RDS(on)) — 2.5 V, 4.5 V
Suhu Operasi — -55C to +150C
Series — OptiMOS™
Automotive Qualification — AEC-Q101
Kiraan Pin — 6

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