BSP125H6327XTSA1 vs BSP89H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSP125H6327XTSA1 dari Infineon dan BSP89H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSP125H6327XTSA1 BSP89H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSP125H6327XTSA1 —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET, enhancement mode
Technology SIPMOS (Small Signal Power MOSFET) SIPMOS (planar power MOS)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 120 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Paket PG-SOT223-4 (SOT-223-3 + tab) PG-SOT223-4 (SOT-223, 4-pin with tab)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55C to +150C (TJ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: typical VGS(th) value]
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Configuration Single —
Channel Mode Enhancement —
Status RoHS Compliant Compliant
Level MSL 1 (Unlimited) —
Qualification Automotive / Industrial grade —
Drain-Source Breakdown Voltage (V(BR)DSS) — 240 V (VGS=0, ID=250 µA)
Continuous Drain Current (ID) at Ta=25°C — 0.35 A
Total Power Dissipation (Ptot) at Ta=25°C — 1.8 W (on FR4 PCB, 6 cm² cooling area)
On-State Resistance (RDS(on)) max — 6 Ω (typical)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Rentang Suhu Kerja — -55 °C to +150 °C (Tj)
Thermal Resistance Junction-Ambient (RthJA) — 70 K/W (6 cm² PCB)
Thermal Resistance Junction-Solder Point (RthJS) — 25 K/W
Logic-Level Gate Drive — Yes (logic-level compatible)
dv/dt Rated — Yes
ESD Protection — Internal gate-source Zener
Automotive Qualification — AEC-Q101 (per ordering code H6327)

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