BSP125H6327XTSA1 vs BSP89H6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP125H6327XTSA1 disebabkan oleh Infineon dan BSP89H6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSP125H6327XTSA1 BSP89H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSP125H6327XTSA1 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET, enhancement mode
Technology SIPMOS (Small Signal Power MOSFET) SIPMOS (planar power MOS)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID) 120 mA (Ta) —
Power Dissipation (PD) 1.8 W (Ta) —
Kemasan PG-SOT223-4 (SOT-223-3 + tab) PG-SOT223-4 (SOT-223, 4-pin with tab)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (TJ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: typical VGS(th) value]
On-Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V] —
Configuration Single —
Channel Mode Enhancement —
Status RoHS Compliant Compliant
Aras MSL 1 (Unlimited) —
Qualification Automotive / Industrial grade —
Drain-Source Breakdown Voltage (V(BR)DSS) — 240 V (VGS=0, ID=250 µA)
Continuous Drain Current (ID) at Ta=25°C — 0.35 A
Total Power Dissipation (Ptot) at Ta=25°C — 1.8 W (on FR4 PCB, 6 cm² cooling area)
On-State Resistance (RDS(on)) max — 6 Ω (typical)
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gambaran Suhu Operasi — -55 °C to +150 °C (Tj)
Thermal Resistance Junction-Ambient (RthJA) — 70 K/W (6 cm² PCB)
Thermal Resistance Junction-Solder Point (RthJS) — 25 K/W
Logic-Level Gate Drive — Yes (logic-level compatible)
dv/dt Rated — Yes
ESD Protection — Internal gate-source Zener
Automotive Qualification — AEC-Q101 (per ordering code H6327)

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