BSP125H6327XTSA1 vs IRLL024ZTRPBF Perbandingan
Perbandingan bersamaan detil BSP125H6327XTSA1 dari Infineon dan IRLL024ZTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP125H6327XTSA1 | IRLL024ZTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies (formerly International Rectifier) |
| Part Number | BSP125H6327XTSA1 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | SIPMOS (Small Signal Power MOSFET) | HEXFET Power MOSFET (trench-gate) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Paket | PG-SOT223-4 (SOT-223-3 + tab) | SOT-223 (TO-261-4) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (Unlimited) | 1 (unlimited floor life) |
| Qualification | Automotive / Industrial grade | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |