BSP129H6906XTSA1 vs BSS127H6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSP129H6906XTSA1 dari Infineon dan BSS127H6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSP129H6906XTSA1 BSS127H6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSP129H6906XTSA1 —
FET Type N-Channel, Depletion Mode N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) 240 V 600 V
Continuous Drain Current (ID) at TA=25C 350 mA —
Power Dissipation (PD) at TA=25C 1.8 W —
Drain-Source On-Resistance (RDS(on)) 6 Ohm (max) —
Operating Mode Normally-On (Depletion) —
Gate-Source Pinch-Off Voltage [DATA_NEEDED: VGS(off) typical value] —
Paket PG-SOT223-4 (SOT-223) SOT-23-3 (PG-SOT23)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 functional + 1 tab (4 leads) —
Rentang Suhu Kerja [DATA_NEEDED: TJ max] —
ESD Protection Integrated Zener diodes on gate —
Status RoHS Compliant Compliant (lead-free)
Level MSL 1 (unlimited floor life) [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 4.5 V (logic level, rated)
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
Suhu Hubung Kerja — -55 C to +150 C
Jumlah Pin — 3
dv/dt Rated — Yes
Automotive Qualification — AEC-Q101
Bebas Halogen — Yes, per IEC 61249-2-21

Spek dan Sumber

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