BSP129H6906XTSA1 vs BSS127H6327XTSA2 比較

詳細並排比較 BSP129H6906XTSA1 由 Infineon 與 BSS127H6327XTSA2 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSP129H6906XTSA1 BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 - 240V N-Ch Depletion MOSFET | Infineon

BSP129H6906XTSA1 ✓ 啟用中
Infineon
BSS127H6327XTSA2 BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 - 600V N-Ch MOSFET, 21mA, SOT-23 | Infineon

BSS127H6327XTSA2 ✓ 啟用中

規格比較

參數 BSP129H6906XTSA1 BSS127H6327XTSA2
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Part Number BSP129H6906XTSA1 —
FET Type N-Channel, Depletion Mode N-Channel SIPMOS, enhancement mode
Drain-Source Voltage (VDS) 240 V 600 V
Continuous Drain Current (ID) at TA=25C 350 mA —
Power Dissipation (PD) at TA=25C 1.8 W —
Drain-Source On-Resistance (RDS(on)) 6 Ohm (max) —
Operating Mode Normally-On (Depletion) —
Gate-Source Pinch-Off Voltage [DATA_NEEDED: VGS(off) typical value] —
封裝 PG-SOT223-4 (SOT-223) SOT-23-3 (PG-SOT23)
安裝類型 Surface Mount Surface Mount
腳位數 3 functional + 1 tab (4 leads) —
工作溫度範圍 [DATA_NEEDED: TJ max] —
ESD Protection Integrated Zener diodes on gate —
RoHS 狀態 Compliant Compliant (lead-free)
MSL 等級 1 (unlimited floor life) [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) — 21 mA (Ta)
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed ID limit]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — 4.5 V (logic level, rated)
On-State Resistance (RDS(on)) max — 500 ohm at ID = 21 mA
Total Power Dissipation (Ptot) — 500 mW (Ta)
工作接面溫度 — -55 C to +150 C
腳位數 — 3
dv/dt Rated — Yes
Automotive Qualification — AEC-Q101
無鹵素 — Yes, per IEC 61249-2-21

資料表與資源

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