BSP316PH6327XTSA1 vs BSD214SNH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSP316PH6327XTSA1 dari Infineon dan BSD214SNH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSP316PH6327XTSA1 | BSD214SNH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Paket | PG-SOT223-4 (TO-261-4) | SOT-363 (PG-SOT363-PO), 6-pin |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +150 C (junction) | -55C to +150C (junction) |
| Jumlah Pin | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | MOSFET (Metal Oxide), OptiMOS |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 | 1 |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) at 25C | — | 1.5 A |
| Power Dissipation (Pd) at Ta | — | 500 mW |
| Gate Drive Voltage (Rds On rated) | — | 2.5 V, 4.5 V |
| Rds On (Max) @ Vgs=4.5V | — | [DATA_NEEDED: Rds On at Vgs=4.5V] |
| Rds On (Max) @ Vgs=2.5V | — | [DATA_NEEDED: Rds On at Vgs=2.5V] |
| Vgs(th) (typical) | — | [DATA_NEEDED: Vgs threshold typical] |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |