BSP316PH6327XTSA1 vs BSD214SNH6327XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP316PH6327XTSA1 disebabkan oleh Infineon dan BSD214SNH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSP316PH6327XTSA1 | BSD214SNH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Kemasan | PG-SOT223-4 (TO-261-4) | SOT-363 (PG-SOT363-PO), 6-pin |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | -55C to +150C (junction) |
| Bilangan Pin | 3 + thermal tab | — |
| Channel Mode | Enhancement | — |
| Technology | SIPMOS (P-channel MOSFET) | MOSFET (Metal Oxide), OptiMOS |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 | 1 |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) at 25C | — | 1.5 A |
| Power Dissipation (Pd) at Ta | — | 500 mW |
| Gate Drive Voltage (Rds On rated) | — | 2.5 V, 4.5 V |
| Rds On (Max) @ Vgs=4.5V | — | [DATA_NEEDED: Rds On at Vgs=4.5V] |
| Rds On (Max) @ Vgs=2.5V | — | [DATA_NEEDED: Rds On at Vgs=2.5V] |
| Vgs(th) (typical) | — | [DATA_NEEDED: Vgs threshold typical] |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| Standard Pack Quantity | — | 3000 (Tape & Reel) |