BSR802NL6327HTSA1 vs BSS205NH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSR802NL6327HTSA1 dari Infineon dan BSS205NH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSR802NL6327HTSA1 | BSS205NH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR802NL6327HTSA1 | BSS205NH6327XTSA1 |
| Technology | OptiMOS 2 (N-Channel Trench MOSFET) | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 20 V | — |
| Continuous Drain Current (ID) max | 3.7 A (Ta=25C) | — |
| Power Dissipation (PD) max | 500 mW (Ta=25C) | — |
| On-Resistance (RDS(on)) typ | 23 mOhm @ VGS=4.5 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Paket | PG-SC59-3 (SC-59 / SOT-346) | PG-SOT23 (SC-59, TO-236-3), 3-pin |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Hubung Kerja | -55C to +150C | — |
| Qualification | Automotive | AEC-Q101 |
| Status RoHS | Compliant | — |
| Jumlah Pin | 3 | — |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage V<sub>DS</sub> | — | 20 V |
| Continuous Drain Current I<sub>D</sub> (Ta) | — | 2.5 A |
| Power Dissipation P<sub>D</sub> (Ta) | — | 500 mW |
| R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) | — | 85 mΩ |
| Gate Threshold V<sub>GS(th)</sub> | — | [DATA_NEEDED: Vgs(th) typical value] |
| Rentang Suhu Kerja | — | -55 °C to +150 °C (junction) |
| Gate Drive Voltage | — | Logic-level compatible |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Packaging | — | Tape & Reel (H6327) |