BSR802NL6327HTSA1 vs BSS205NH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSR802NL6327HTSA1 disebabkan oleh Infineon dan BSS205NH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSS205NH6327XTSA1 BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 - 20V N-Ch 2.5A MOSFET SOT-23 | Infineon

BSS205NH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSR802NL6327HTSA1 BSS205NH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSR802NL6327HTSA1 BSS205NH6327XTSA1
Technology OptiMOS 2 (N-Channel Trench MOSFET) —
Channel Type N-Channel —
Drain-Source Voltage (VDS) max 20 V —
Continuous Drain Current (ID) max 3.7 A (Ta=25C) —
Power Dissipation (PD) max 500 mW (Ta=25C) —
On-Resistance (RDS(on)) typ 23 mOhm @ VGS=4.5 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Kemasan PG-SC59-3 (SC-59 / SOT-346) PG-SOT23 (SC-59, TO-236-3), 3-pin
Jenis Pemasangan Surface Mount Surface Mount
Suhu Hubungan Operasi -55C to +150C —
Qualification Automotive AEC-Q101
Status RoHS Compliant —
Kiraan Pin 3 —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage V<sub>DS</sub> — 20 V
Continuous Drain Current I<sub>D</sub> (Ta) — 2.5 A
Power Dissipation P<sub>D</sub> (Ta) — 500 mW
R<sub>DS(on)</sub> max (V<sub>GS</sub>=4.5 V) — 85 mΩ
Gate Threshold V<sub>GS(th)</sub> — [DATA_NEEDED: Vgs(th) typical value]
Gambaran Suhu Operasi — -55 °C to +150 °C (junction)
Gate Drive Voltage — Logic-level compatible
Lead Plating — Pb-free
RoHS Compliance — Compliant
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Packaging — Tape & Reel (H6327)

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