BSS127H6327XTSA2 vs BSP129H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS127H6327XTSA2 dari Infineon dan BSP129H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS127H6327XTSA2 BSP129H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel SIPMOS, enhancement mode N-Channel, Depletion Mode
Drain-Source Voltage (VDS) 600 V 240 V
Continuous Drain Current (ID) 21 mA (Ta) —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: pulsed ID limit] —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) 4.5 V (logic level, rated) —
On-State Resistance (RDS(on)) max 500 ohm at ID = 21 mA —
Total Power Dissipation (Ptot) 500 mW (Ta) —
Suhu Hubung Kerja -55 C to +150 C —
Paket SOT-23-3 (PG-SOT23) PG-SOT223-4 (SOT-223, 3+Tab)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 3 —
dv/dt Rated Yes —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Status RoHS Compliant (lead-free) Compliant
Bebas Halogen Yes, per IEC 61249-2-21 —
Level MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Continuous Drain Current (ID) at TA=25C — 350 mA
On-Resistance RDS(on) max — 4.2 ohm (some sources 6 ohm)
Power Dissipation (PD) at TA=25C — 1.8 W
Suhu Kerja — -55 C to +150 C (junction)
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Threshold Voltage VGS(off) — [DATA_NEEDED: depletion threshold VGS(off)]
dv/dt Ruggedness — Yes (rated)
Lead-Free — Yes
Process Technology — SIPMOS (vertical DMOS)
Drain Terminal — Tab (pin 4)

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