BSS127H6327XTSA2 vs BSP129H6327XTSA1 比較
詳細並排比較 BSS127H6327XTSA2 由 Infineon 與 BSP129H6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSS127H6327XTSA2 | BSP129H6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel SIPMOS, enhancement mode | N-Channel, Depletion Mode |
| Drain-Source Voltage (VDS) | 600 V | 240 V |
| Continuous Drain Current (ID) | 21 mA (Ta) | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: pulsed ID limit] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | 4.5 V (logic level, rated) | — |
| On-State Resistance (RDS(on)) max | 500 ohm at ID = 21 mA | — |
| Total Power Dissipation (Ptot) | 500 mW (Ta) | — |
| 工作接面溫度 | -55 C to +150 C | — |
| 封裝 | SOT-23-3 (PG-SOT23) | PG-SOT223-4 (SOT-223, 3+Tab) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 3 | — |
| dv/dt Rated | Yes | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS 狀態 | Compliant (lead-free) | Compliant |
| 無鹵素 | Yes, per IEC 61249-2-21 | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Continuous Drain Current (ID) at TA=25C | — | 350 mA |
| On-Resistance RDS(on) max | — | 4.2 ohm (some sources 6 ohm) |
| Power Dissipation (PD) at TA=25C | — | 1.8 W |
| 工作溫度 | — | -55 C to +150 C (junction) |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Threshold Voltage VGS(off) | — | [DATA_NEEDED: depletion threshold VGS(off)] |
| dv/dt Ruggedness | — | Yes (rated) |
| Lead-Free | — | Yes |
| Process Technology | — | SIPMOS (vertical DMOS) |
| Drain Terminal | — | Tab (pin 4) |