BSS169H6327XTSA1 vs BSP315PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS169H6327XTSA1 dari Infineon dan BSP315PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS169H6327XTSA1 | BSP315PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 170 mA (Ta) | -1.17 A (Ta) |
| Power Dissipation (PD) | 360 mW (Ta) | 1.8 W (Ta) |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | [DATA_NEEDED: VGS(th) typical and min/max] |
| Rentang Suhu Kerja | [DATA_NEEDED: junction/ambient operating temperature range] | -55 C to +150 C (junction) |
| Paket | PG-SOT23 (SOT-23-3) | PG-SOT223-4 (SOT-223-3 pinout with exposed tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Technology | Depletion-mode vertical DMOS | OptiMOS (enhancement mode) |
| Drain Current at 25C | 170 mA continuous | — |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | — |
| Drain-Source Voltage (VDS) | — | -60 V |
| Gate-Source Voltage (VGS) | — | ±20 V (max) |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Avalanche Energy Rated | — | Yes (per datasheet) |
| Lead-Free / RoHS | — | Yes / Compliant |