BSS169H6327XTSA1 vs BSP315PH6327XTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS169H6327XTSA1 disebabkan oleh Infineon dan BSP315PH6327XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
BSP315PH6327XTSA1 BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 - 60V P-Ch OptiMOS MOSFET | Infineon

BSP315PH6327XTSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr BSS169H6327XTSA1 BSP315PH6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel Depletion Mode P-Channel
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 170 mA (Ta) -1.17 A (Ta)
Power Dissipation (PD) 360 mW (Ta) 1.8 W (Ta)
RDS(on) Maximum 6 Ohm at VGS=0 V —
Gate-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute maximum rating] —
Gate Threshold Voltage (VGS(th)) Pinch-off approx. -3.5 V (typical) [DATA_NEEDED: VGS(th) typical and min/max]
Gambaran Suhu Operasi [DATA_NEEDED: junction/ambient operating temperature range] -55 C to +150 C (junction)
Kemasan PG-SOT23 (SOT-23-3) PG-SOT223-4 (SOT-223-3 pinout with exposed tab)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin 3 —
Aras MSL 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant —
Lead-Free Yes —
Technology Depletion-mode vertical DMOS OptiMOS (enhancement mode)
Drain Current at 25C 170 mA continuous —
Typical RDS(on) [DATA_NEEDED: typical RDS(on) value] —
Drain-Source Voltage (VDS) — -60 V
Gate-Source Voltage (VGS) — ±20 V (max)
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) at VGS=-10 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Avalanche Energy Rated — Yes (per datasheet)
Lead-Free / RoHS — Yes / Compliant

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