BSS169H6327XTSA1 vs BSP316PH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BSS169H6327XTSA1 dari Infineon dan BSP316PH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSS169H6327XTSA1 | BSP316PH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel Depletion Mode | P-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | -100 V |
| Continuous Drain Current (ID) | 170 mA (Ta) | — |
| Power Dissipation (PD) | 360 mW (Ta) | — |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | [DATA_NEEDED: VGS(th) typical] |
| Rentang Suhu Kerja | [DATA_NEEDED: junction/ambient operating temperature range] | -55 C to +150 C (junction) |
| Paket | PG-SOT23 (SOT-23-3) | PG-SOT223-4 (TO-261-4) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 3 | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Technology | Depletion-mode vertical DMOS | SIPMOS (P-channel MOSFET) |
| Drain Current at 25C | 170 mA continuous | — |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | — |
| Continuous Drain Current (ID) at TA=25C | — | -680 mA |
| Total Power Dissipation (Ptot) at TA=25C | — | 1.8 W |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=-10V] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Jumlah Pin | — | 3 + thermal tab |
| Channel Mode | — | Enhancement |
| Packaging | — | Tape & Reel (H6327 suffix) |