BSS306NH6327XTSA1 vs BSS138NH6327XTSA2 Perbandingan

Perbandingan bersamaan detil BSS306NH6327XTSA1 dari Infineon dan BSS138NH6327XTSA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS306NH6327XTSA1 BSS138NH6327XTSA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSS306NH6327XTSA1 —
Part Family BSS306N (OptiMOS Small Signal) —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) 2.3 A (Ta) —
Power Dissipation (PD) 500 mW (Ta) —
RDS(on) max [DATA_NEEDED: exact RDS(on) max value in mΩ] —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max in V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) in V] —
Paket SOT-23 (PG-SOT23), 3-pin PG-SOT-23 (3-pin)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55°C to +150°C (TJ) —
Qualification AEC-Q101 (Automotive) —
Lead Plating Pb-free (RoHS compliant) Pb-free
Configuration Single N-Channel, 3-pin —
Polarity — N-Channel
Operating Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 60 V
R_DS(on) max @ V_GS=10V — 3.5 ohm
Continuous Drain Current (Ta) — 230 mA
Power Dissipation (Ta) — 360 mW
Gate Threshold V_GS(th) — [DATA_NEEDED: typical V_GS(th) value]
Rentang Suhu Kerja — [DATA_NEEDED: Tj max and operating range]
Gate-Source Voltage V_GS max — ±20 V
dv/dt Rated — Yes
Bebas Halogen — Yes (per IEC 61249-2-21)
RoHS Compliance — Compliant
AEC-Q101 Qualification — Qualified
Marking Code — [DATA_NEEDED: top-side marking code]
Packaging — Tape and Reel

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