BSS316NH6327XTSA1 vs BSP149H6327XTSA1 Perbandingan

Perbandingan bersamaan detil BSS316NH6327XTSA1 dari Infineon dan BSP149H6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS316NH6327XTSA1 BSP149H6327XTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel, Enhancement Mode —
Technology OptiMOS 2 (Trench) SIPMOS
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TA=25C 1.4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Drain-Source On-Resistance RDS(on) max 160 mOhm at VGS=10V, ID=1.4A —
Gate-Source Threshold Voltage VGS(th) typ 2 V at ID=3.7 uA —
Total Gate Charge (Qg) 600 pC at VGS=5 V —
Input Capacitance (Ciss) 94 pF at VDS=15 V —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: reverse transfer capacitance] —
Maximum Power Dissipation (PD) at TA=25C 500 mW —
Rentang Suhu Hubung Kerja -55 C to +150 C —
Paket PG-SOT23 (SOT-23-3) PG-SOT223-4 (SOT-223-4)
Tipe Mounting Surface Mount Surface Mount
Lead Plating Pb-free (Matte Tin) —
Level MSL MSL1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 qualified —
Transistor Polarity — N-Channel
Mode of Operation — Depletion Mode (normally ON)
Drain-Source Voltage VDS — 200 V
Continuous Drain Current ID — 660 mA (Ta)
Power Dissipation PD — 1.8 W (Ta)
On-State Resistance RDS(on) — 1 ohm (typ)
Gate-Source Voltage VGS — [DATA_NEEDED: max VGS rating]
Suhu Kerja — -55 C to +150 C (Tj)
Channel Count — 1
Jumlah Pin — 4 (G, D, S, tab)
Configuration — Single

Spek dan Sumber

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