BSS87H6327FTSA1 vs BSS192PH6327FTSA1 Perbandingan

Perbandingan bersamaan detil BSS87H6327FTSA1 dari Infineon dan BSS192PH6327FTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSS87H6327FTSA1 BSS192PH6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel enhancement-mode P-Channel
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 260 mA (Ta) —
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Paket PG-SOT89-4-2 (SOT-89) PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) [DATA_NEEDED: Tj max / operating temp]
Jumlah Pin 3 (Gate / Drain / Source) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per distributor listing)
Status RoHS Compliant [DATA_NEEDED: explicit RoHS status from datasheet]
Lead-Free / Pb-Free Yes (Pb-free plating) —
Level MSL 1 (per JEDEC J-STD-020) —
Process Technology Vertical DMOS —
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) — 250 V
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Series — SIPMOS Small-Signal-Transistor
Part Status — Active

Spek dan Sumber

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