BSS87H6327FTSA1 vs BSS192PH6327FTSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSS87H6327FTSA1 disebabkan oleh Infineon dan BSS192PH6327FTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSS87H6327FTSA1 BSS192PH6327FTSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel enhancement-mode P-Channel
Drain-Source Voltage (VDS) 240 V —
Continuous Drain Current (ID) 260 mA (Ta) —
Power Dissipation (PD) 1 W (Ta) —
Drain-Source On-Resistance (RDS(on)) 6 ohm max at VGS=10V —
Gate-Source Voltage (VGS) +/-20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Kemasan PG-SOT89-4-2 (SOT-89) PG-SOT89 (SOT-89-3, 4-pin 3+Tab)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) [DATA_NEEDED: Tj max / operating temp]
Kiraan Pin 3 (Gate / Drain / Source) —
Automotive Qualification AEC-Q101 qualified AEC-Q101 (per distributor listing)
Status RoHS Compliant [DATA_NEEDED: explicit RoHS status from datasheet]
Lead-Free / Pb-Free Yes (Pb-free plating) —
Aras MSL 1 (per JEDEC J-STD-020) —
Process Technology Vertical DMOS —
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) — 250 V
Continuous Drain Current (Id) @ 25C — 190 mA (Ta)
Power Dissipation (Pd) — 1 W (Ta)
Drive Voltage (Max Rds On, Min Rds On) — 2.8 V, 10 V
Rds On (Max) @ Id, Vgs — [DATA_NEEDED: Rds On max @ Vgs]
Vgs(th) (Max) — [DATA_NEEDED: gate threshold voltage max]
Vgs(th) (Typ) — [DATA_NEEDED: gate threshold voltage typ]
Series — SIPMOS Small-Signal-Transistor
Part Status — Active

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