BSZ017NE2LS5IATMA1 vs BSC014N04LSATMA1 Perbandingan
Perbandingan bersamaan detil BSZ017NE2LS5IATMA1 dari Infineon dan BSC014N04LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ017NE2LS5IATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (TA) | 27 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΩ | — |
| On-Resistance Test Current | 20 A | — |
| Gate-Source Voltage (VGS) Rating | ±16 V | — |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 µA | — |
| Total Gate Charge Qg | 30 nC @ VGS=10V | — |
| Input Capacitance Ciss | 2000 pF @ VDS=12V | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 50 W | — |
| Suhu Hubung Kerja | -55°C to +150°C | — |
| Paket | PG-TSDSON-8-FL (8-PowerTDFN) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Series / Family | OptiMOS 5 25V | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Rentang Suhu Kerja | — | -55C to +175C |
| Technology | — | Trench (OptiMOS 5, thin-wafer) |
| Level MSL | — | 1 (unlimited) |