BSZ017NE2LS5IATMA1 vs BSC014N04LSATMA1 Comparison
Detailed side-by-side comparison of BSZ017NE2LS5IATMA1 by Infineon and BSC014N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ017NE2LS5IATMA1
BSZ017NE2LS5IATMA1 - 25V OptiMOS 5 N-FET, 1.7mΞ© TSDSON-8
BSZ017NE2LS5IATMA1 β ActiveInfineon
BSC014N04LSATMA1
BSC014N04LSATMA1 - 40V 1.4mOhm OptiMOS 5 N-Ch MOSFET | Infineon
BSC014N04LSATMA1 β ActiveSpecification Comparison
| Parameter | BSZ017NE2LS5IATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.64 | $0.74 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (TA) | 27 A | β |
| Continuous Drain Current (TC) | 40 A | β |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΞ© | β |
| On-Resistance Test Current | 20 A | β |
| Gate-Source Voltage (VGS) Rating | Β±16 V | β |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 Β΅A | β |
| Total Gate Charge Qg | 30 nC @ VGS=10V | β |
| Input Capacitance Ciss | 2000 pF @ VDS=12V | β |
| Power Dissipation (TA) | 2.1 W | β |
| Power Dissipation (TC) | 50 W | β |
| Operating Junction Temperature | -55Β°C to +150Β°C | β |
| Package | PG-TSDSON-8-FL (8-PowerTDFN) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Series / Family | OptiMOS 5 25V | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 32 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Power Dissipation at Ta | β | 2.5 W |
| Power Dissipation at Tc | β | 96 W |
| Gate-Source Voltage (VGS) max | β | 20 V |
| Operating Temperature Range | β | -55C to +175C |
| Technology | β | Trench (OptiMOS 5, thin-wafer) |
| MSL Level | β | 1 (unlimited) |