BSZ017NE2LS5IATMA1 vs BSC014N04LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ017NE2LS5IATMA1 disebabkan oleh Infineon dan BSC014N04LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSZ017NE2LS5IATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (TA) | 27 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| On-Resistance RDS(on) @ VGS=10V | 1.7 mΩ | — |
| On-Resistance Test Current | 20 A | — |
| Gate-Source Voltage (VGS) Rating | ±16 V | — |
| Gate Threshold Voltage VGS(th) | 2 V @ 250 µA | — |
| Total Gate Charge Qg | 30 nC @ VGS=10V | — |
| Input Capacitance Ciss | 2000 pF @ VDS=12V | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 50 W | — |
| Suhu Hubungan Operasi | -55°C to +150°C | — |
| Kemasan | PG-TSDSON-8-FL (8-PowerTDFN) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Series / Family | OptiMOS 5 25V | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gambaran Suhu Operasi | — | -55C to +175C |
| Technology | — | Trench (OptiMOS 5, thin-wafer) |
| Aras MSL | — | 1 (unlimited) |