BSZ018NE2LSATMA1 vs ISC011N03L5SATMA1 Perbandingan
Perbandingan bersamaan detil BSZ018NE2LSATMA1 dari Infineon dan ISC011N03L5SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ018NE2LSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| Rentang Suhu Kerja | -55C to +150C | — |
| Paket | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Bebas Halogen | Yes | — |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| Suhu Kerja | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |