BSZ018NE2LSATMA1 vs ISC011N03L5SATMA1 比較
詳細並排比較 BSZ018NE2LSATMA1 由 Infineon 與 ISC011N03L5SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSZ018NE2LSATMA1 | ISC011N03L5SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 5 trench MOSFET |
| Drain-Source Voltage (VDS) | 25 V | 30 V |
| Continuous Drain Current (TA) | 23 A | — |
| Continuous Drain Current (TC) | 40 A | — |
| Power Dissipation (TA) | 2.1 W | — |
| Power Dissipation (TC) | 69 W | — |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) typical at VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge at VGS=10V] | — |
| 工作溫度範圍 | -55C to +150C | — |
| 封裝 | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 無鹵素 | Yes | — |
| Series | — | OptiMOS 5 / StrongIRFET 30 V |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) @ Ta=25C | — | 37 A |
| Continuous Drain Current (ID) @ Tc=25C | — | 100 A |
| Power Dissipation (PD) @ Ta=25C | — | 2.5 W |
| Power Dissipation (PD) @ Tc=25C | — | 96 W |
| 工作溫度 | — | -55 C to +175 C (TJ) |
| Gate Drive | — | Logic-level compatible |