BSZ036NE2LSATMA1 vs BSZ018NE2LSATMA1 Perbandingan
Perbandingan bersamaan detil BSZ036NE2LSATMA1 dari Infineon dan BSZ018NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ036NE2LSATMA1 | BSZ018NE2LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | OptiMOS 25V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| Paket | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +150C |
| Level MSL | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Gate Drive | Logic-level compatible | — |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (TA) | — | 23 A |
| Continuous Drain Current (TC) | — | 40 A |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 69 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Bebas Halogen | — | Yes |