BSZ036NE2LSATMA1 vs BSZ018NE2LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ036NE2LSATMA1 disebabkan oleh Infineon dan BSZ018NE2LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSZ036NE2LSATMA1 | BSZ018NE2LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | OptiMOS 25V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at TA=25C | 16 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 37 W | — |
| Kemasan | PG-TSDSON-8-FL (5x6 mm) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Configuration | Single | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C |
| Aras MSL | 1 (Unlimited) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Gate Drive | Logic-level compatible | — |
| Technology | — | N-Channel Trench MOSFET |
| Continuous Drain Current (TA) | — | 23 A |
| Continuous Drain Current (TC) | — | 40 A |
| Power Dissipation (TA) | — | 2.1 W |
| Power Dissipation (TC) | — | 69 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Boson Bebas | — | Yes |