BSZ0501NSIATMA1 vs BSC0501NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0501NSIATMA1 dari Infineon dan BSC0501NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0501NSIATMA1 BSC0501NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon
Part Number BSZ0501NSIATMA1 —
Product Family OptiMOS 5 (25V/30V) OptiMOS 5 25V/30V
FET Type N-Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) at TA=25C 25 A —
Continuous Drain Current (Id) at TC=25C 40 A —
Power Dissipation (Pd) at TA=25C 2.1 W —
Power Dissipation (Pd) at TC=25C 50 W —
Operating Mode Enhancement Mode —
Configuration Single with built-in diode —
Paket PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TDSON-8-6 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Number of Terminals 8 —
JESD-609 Code e3 (matte tin) —
Level MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: Qg typical]
Rentang Suhu Kerja [DATA_NEEDED: Tj max] —
Status RoHS Compliant Compliant
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Suhu Hubung Kerja — -55C to +150C
Avalanche Rated — Yes
Technology — Trench-gate OptiMOS 5

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