BSZ0501NSIATMA1 vs BSC0501NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ0501NSIATMA1 disebabkan oleh Infineon dan BSC0501NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ0501NSIATMA1 BSC0501NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon
Part Number BSZ0501NSIATMA1 —
Product Family OptiMOS 5 (25V/30V) OptiMOS 5 25V/30V
FET Type N-Channel —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Id) at TA=25C 25 A —
Continuous Drain Current (Id) at TC=25C 40 A —
Power Dissipation (Pd) at TA=25C 2.1 W —
Power Dissipation (Pd) at TC=25C 50 W —
Operating Mode Enhancement Mode —
Configuration Single with built-in diode —
Kemasan PG-TSDSON-8-FL (3.3 x 3.3 mm) PG-TDSON-8-6 (SuperSO8)
Jenis Pemasangan Surface Mount Surface Mount
Number of Terminals 8 —
JESD-609 Code e3 (matte tin) —
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Rds(on) at Vgs=10V (typ) [DATA_NEEDED: Rds(on) value] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] [DATA_NEEDED: Qg typical]
Gambaran Suhu Operasi [DATA_NEEDED: Tj max] —
Status RoHS Compliant Compliant
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Ta — 29 A
Continuous Drain Current (ID) at Tc — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 50 W
Gate-Source Voltage (VGS) — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at 10V VGS]
Suhu Hubungan Operasi — -55C to +150C
Avalanche Rated — Yes
Technology — Trench-gate OptiMOS 5

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