BSZ0904NSIATMA1 vs IAUCN08S7L033ATMA1 Perbandingan
Perbandingan bersamaan detil BSZ0904NSIATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ0904NSIATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS (N-channel power MOSFET) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=4.5V | 4 mOhm | — |
| On-State Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Power Dissipation at Ta | 2.1 W | — |
| Power Dissipation at Tc | 37 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V (typical Infineon OptiMOS 7 limit) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical] |
| Rentang Suhu Kerja | -55C to +150C | -55°C to +175°C (TJ) |
| Paket | PG-TSDSON-8-FL (PQFN 3.3x3.3) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Integrated Schottky-like Diode | Yes (monolithic) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Qualification | JEDEC qualified for target applications | Automotive Grade (per Infineon datasheet header) |
| Lead Plating | Pb-free | — |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Level MSL | — | 1 (per JEDEC J-STD-020, typical for this package) |