BSZ0904NSIATMA1 vs IAUCN08S7L033ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ0904NSIATMA1 sa pamamagitan ng Infineon at IAUCN08S7L033ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ0904NSIATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS (N-channel power MOSFET) | OptiMOS 7 trench MOSFET |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 18 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=4.5V | 4 mOhm | — |
| On-State Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Power Dissipation at Ta | 2.1 W | — |
| Power Dissipation at Tc | 37 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | ±20 V (typical Infineon OptiMOS 7 limit) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | [DATA_NEEDED: VGS(th) typical] |
| Hanay ng Temperature na Operasyon | -55C to +150C | -55°C to +175°C (TJ) |
| Packhaging | PG-TSDSON-8-FL (PQFN 3.3x3.3) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Integrated Schottky-like Diode | Yes (monolithic) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Qualification | JEDEC qualified for target applications | Automotive Grade (per Infineon datasheet header) |
| Lead Plating | Pb-free | — |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Level ng MSL | — | 1 (per JEDEC J-STD-020, typical for this package) |