BSZ0994NSATMA1 vs BSZ0901NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0994NSATMA1 dari Infineon dan BSZ0901NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0994NSATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 30V OptiMOS 25V
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID, Ta) 13 A —
Power Dissipation (PD, Ta) 2.1 W —
Technology Trench (OptiMOS 5) OptiMOS trench N-channel MOSFET
Paket PG-TSDSON-8-25 (5x6 mm) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Rentang Suhu Kerja -55C to +150C (junction) -55 C to +150 C (typical MOSFET range)
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) typ] —
On-Resistance (RDS(on), typ @10V) [DATA_NEEDED: RDS(on) typ @VGS=10V] —
Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge Qg] —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) —
Packaging Tape & Reel Tape & Reel (ATMA1 suffix = 13-inch reel)
Part Number — BSZ0901NSIATMA1
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Jumlah Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]

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