BSZ0994NSATMA1 vs BSZ0901NSIATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ0994NSATMA1 disebabkan oleh Infineon dan BSZ0901NSIATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ0994NSATMA1 BSZ0901NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 30V OptiMOS 25V
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID, Ta) 13 A —
Power Dissipation (PD, Ta) 2.1 W —
Technology Trench (OptiMOS 5) OptiMOS trench N-channel MOSFET
Kemasan PG-TSDSON-8-25 (5x6 mm) PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 8 —
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +150 C (typical MOSFET range)
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) typ] —
On-Resistance (RDS(on), typ @10V) [DATA_NEEDED: RDS(on) typ @VGS=10V] —
Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge Qg] —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) —
Packaging Tape & Reel Tape & Reel (ATMA1 suffix = 13-inch reel)
Part Number — BSZ0901NSIATMA1
FET Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 25 A
Continuous Drain Current (ID) at Tc=25C — 40 A
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 69 W
Kiraan Pin — 8
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
On-Resistance RDS(on) max @ VGS=10V — [DATA_NEEDED: RDS(on) max @ VGS=10V]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) max @ VGS=4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge Qg]

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