BSZ130N03LSGATMA1 vs BSC076N06NS3GATMA1 Perbandingan

Perbandingan bersamaan detil BSZ130N03LSGATMA1 dari Infineon dan BSC076N06NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ130N03LSGATMA1 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 25V / 30V —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Ta=25 C) 10 A —
Arus Alir Berlanjut (TC=25°C) 35 A —
On-State Resistance Rds(on) max @ Vgs=10V 13 mOhm —
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA 2.2 V —
Power Dissipation (Ta) 2.1 W 2.5 W
Power Dissipation (Tc) 25 W 69 W
Paket PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +150 C (junction) -55C to +150C
Level MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Status RoHS Compliant —
Lead-Free Yes —
Bebas Halogen Yes Yes (per Infineon product page)
Qualification Industrial / Commercial (non-automotive) —
Product Family — OptiMOS 3
Technology — N-Channel Trench MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
RoHS Compliance — Compliant

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