BSZ130N03LSGATMA1 vs BSC076N06NS3GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ130N03LSGATMA1 disebabkan oleh Infineon dan BSC076N06NS3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ130N03LSGATMA1 BSC076N06NS3GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 25V / 30V —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (Vds) 30 V —
Continuous Drain Current (Ta=25 C) 10 A —
Arus Kumpal Tetap (TC=25°C) 35 A —
On-State Resistance Rds(on) max @ Vgs=10V 13 mOhm —
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA 2.2 V —
Power Dissipation (Ta) 2.1 W 2.5 W
Power Dissipation (Tc) 25 W 69 W
Kemasan PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) PG-TDSON-8-5 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +150 C (junction) -55C to +150C
Aras MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Status RoHS Compliant —
Lead-Free Yes —
Boson Bebas Yes Yes (per Infineon product page)
Qualification Industrial / Commercial (non-automotive) —
Product Family — OptiMOS 3
Technology — N-Channel Trench MOSFET
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25C — 50 A
On-Resistance RDS(on) max at VGS=10V — 7.6 mΩ
On-Resistance RDS(on) max at VGS=4.5V — 10.4 mΩ
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — 2.0 V to 3.5 V
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]
RoHS Compliance — Compliant

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