BSZ150N10LS3GATMA1 vs BSZ036NE2LSATMA1 Perbandingan
Perbandingan bersamaan detil BSZ150N10LS3GATMA1 dari Infineon dan BSZ036NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BSZ150N10LS3GATMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ150N10LS3GATMA1 | — |
| Technology / Family | OptiMOS 3 | — |
| Tipe Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Continuous Drain Current (ID, Tc=25 °C) | 40 A | — |
| On-Resistance RDS(on) max | 15 mΩ | — |
| Power Dissipation (TA=25 °C) | 2.1 W | — |
| Dissipasi Listrik (TC=25°C) | 63 W | — |
| Paket | PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Operating Temperature Range (TJ) | -55 °C to +150 °C | — |
| Gate Threshold VGS(th) typ | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge Qg] | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free / Reflow | Yes (lead-free, 260 °C peak reflow compatible) | — |
| Level MSL | [DATA_NEEDED: MSL moisture sensitivity level] | 1 (Unlimited) |
| Product Family | — | OptiMOS 25V |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 16 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 37 W |
| Configuration | — | Single |
| Rentang Suhu Kerja | — | -55C to +150C |
| Lead-Free | — | Yes |
| Gate Drive | — | Logic-level compatible |