BSZ150N10LS3GATMA1 vs BSZ036NE2LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ150N10LS3GATMA1 sa pamamagitan ng Infineon at BSZ036NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 - 100V N-Ch OptiMOS 3 MOSFET | Infineon

BSZ150N10LS3GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ150N10LS3GATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ150N10LS3GATMA1 —
Technology / Family OptiMOS 3 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 25 V
Continuous Drain Current (ID, Tc=25 °C) 40 A —
On-Resistance RDS(on) max 15 mΩ —
Power Dissipation (TA=25 °C) 2.1 W —
Pwersang Pinahihigpit (TC=25°C) 63 W —
Packhaging PG-TSDSON-8 (PQFN 3.3 x 3.3 mm) PG-TSDSON-8-FL (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Operating Temperature Range (TJ) -55 °C to +150 °C —
Gate Threshold VGS(th) typ [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Tindminan RoHS Compliant Compliant
Lead-Free / Reflow Yes (lead-free, 260 °C peak reflow compatible) —
Level ng MSL [DATA_NEEDED: MSL moisture sensitivity level] 1 (Unlimited)
Product Family — OptiMOS 25V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
Hanay ng Temperature na Operasyon — -55C to +150C
Lead-Free — Yes
Gate Drive — Logic-level compatible

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