BSZ900N20NS3GATMA1 vs IRL40S212ARMA1 Perbandingan

Perbandingan bersamaan detil BSZ900N20NS3GATMA1 dari Infineon dan IRL40S212ARMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ900N20NS3GATMA1 IRL40S212ARMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number BSZ900N20NS3GATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 3 (N-Channel Trench MOSFET) StrongIRFET™ (planar N-channel)
Drain-Source Voltage (VDS) 200 V 40 V
Continuous Drain Current (ID, Tc=25C) 15.2 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) 90 mΩ —
Typical RDS(on) @ VGS=10V 77 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th) typ) 3.5 V —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg] —
Power Dissipation (PD, Tc=25C) 62.5 W —
Suhu Hubung Kerja -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Paket PG-TSDSON-8 (TDSON-8 FL) PG-TO263-3 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) 1 (unlimited)
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
ESD Protection Yes (integrated) —
Avalanche Energy Rated Yes (EAS) —
Part Family — StrongIRFET™
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 195 A
On-Resistance (RDS(on)) — 1.9 mOhm max
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (PD, Tc) — 231 W
Rentang Suhu Kerja — [DATA_NEEDED: Tj max]
Lead-Free — Yes

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