BSZ900N20NS3GATMA1 vs IRL40S212ARMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ900N20NS3GATMA1 disebabkan oleh Infineon dan IRL40S212ARMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ900N20NS3GATMA1 IRL40S212ARMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number BSZ900N20NS3GATMA1 —
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 3 (N-Channel Trench MOSFET) StrongIRFET™ (planar N-channel)
Drain-Source Voltage (VDS) 200 V 40 V
Continuous Drain Current (ID, Tc=25C) 15.2 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on) max @ VGS=10V) 90 mΩ —
Typical RDS(on) @ VGS=10V 77 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th) typ) 3.5 V —
Total Gate Charge (Qg typ) [DATA_NEEDED: Qg] —
Power Dissipation (PD, Tc=25C) 62.5 W —
Suhu Hubungan Operasi -55C to +150C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Kemasan PG-TSDSON-8 (TDSON-8 FL) PG-TO263-3 (D2PAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited) 1 (unlimited)
Status RoHS Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes —
ESD Protection Yes (integrated) —
Avalanche Energy Rated Yes (EAS) —
Part Family — StrongIRFET™
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tc) — 195 A
On-Resistance (RDS(on)) — 1.9 mOhm max
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ]
Power Dissipation (PD, Tc) — 231 W
Gambaran Suhu Operasi — [DATA_NEEDED: Tj max]
Lead-Free — Yes

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