BTS3118NHUMA1 vs BSS214NWH6327XTSA1 Perbandingan
Perbandingan bersamaan detil BTS3118NHUMA1 dari Infineon dan BSS214NWH6327XTSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | BTS3118NHUMA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | Power MOSFET Drivers | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Switch Type | Low-Side Power Switch | — |
| Konfigurasi Output | 1:1 | — |
| Jumlah Output | 1 | — |
| Continuous Drain Current | 2.17 A | — |
| Operating Voltage (Vbb) | 6 V to 18 V nominal (overvoltage protected) | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: typical RDS(on) at 25C] | — |
| Input Logic Level | Logic-level (3.3 V / 5 V MCU compatible) | — |
| Input Protection | ESD protected | — |
| Thermal Protection | Thermal shutdown with latch | — |
| Fault Protection | Overload, short-circuit, overvoltage, current limit | — |
| Paket | PG-SOT223-4 | PG-SOT323 (SOT-323-3) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Suhu Kerja | -40 C to +150 C junction | -55C to +150C (junction) |
| RoHS Compliance | Green product, RoHS compliant | — |
| Process Technology | Smart SIPMOS (vertical N-channel) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Qualification | — | AEC-Q101 (Automotive) |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |