BTS3118NHUMA1 vs BSS214NWH6327XTSA1 比較
詳細並排比較 BTS3118NHUMA1 由 Infineon 與 BSS214NWH6327XTSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BTS3118NHUMA1 | BSS214NWH6327XTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | Power MOSFET Drivers | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Switch Type | Low-Side Power Switch | — |
| 輸出配置 | 1:1 | — |
| 輸出數量 | 1 | — |
| Continuous Drain Current | 2.17 A | — |
| Operating Voltage (Vbb) | 6 V to 18 V nominal (overvoltage protected) | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: typical RDS(on) at 25C] | — |
| Input Logic Level | Logic-level (3.3 V / 5 V MCU compatible) | — |
| Input Protection | ESD protected | — |
| Thermal Protection | Thermal shutdown with latch | — |
| Fault Protection | Overload, short-circuit, overvoltage, current limit | — |
| 封裝 | PG-SOT223-4 | PG-SOT323 (SOT-323-3) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -40 C to +150 C junction | -55C to +150C (junction) |
| RoHS Compliance | Green product, RoHS compliant | — |
| Process Technology | Smart SIPMOS (vertical N-channel) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS214NWH6327XTSA1 |
| Series | — | OptiMOS |
| Technology | — | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | — | 20 V |
| Continuous Drain Current (Id) @ 25C | — | 1.5 A |
| Rds(on) Max @ Vgs=4.5V | — | 250 mOhm |
| Drive Voltage (Max Rds On, Min Rds On) | — | 2.5 V, 4.5 V |
| Power Dissipation (Pd) @ Ta=25C | — | 500 mW |
| Qualification | — | AEC-Q101 (Automotive) |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |