CGD65A055SH2 vs CGD65A055S2 Perbandingan

Perbandingan bersamaan detil CGD65A055SH2 dari Cambridge GaN Devices dan CGD65A055S2 dari Cambridge GaN Devices. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Cambridge GaN Devices
CGD65A055SH2 CGD65A055SH2 - 650V 55mΩ GaN HEMT ICeGaN® H2 | CGD

CGD65A055SH2 - 650V 55mΩ GaN HEMT ICeGaN® H2 | CGD

CGD65A055SH2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum CGD65A055SH2 CGD65A055S2
Merek Cambridge GaN Devices Cambridge GaN Devices
Kategori MOSFETs Transistors
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel Single FET
Transistor Technology Gallium Nitride (GaN-on-Si HEMT) —
Drain-Source Voltage (VDS) 650 V —
Continuous Drain Current (ID, Tc=25°C) 27 A —
Static Drain-Source On-Resistance (RDS(on)) 55 mΩ (typical, per family designation) —
RDS(on) at specified ID/VGS 77 mΩ at 2.2 A, VGS=12 V (per distributor data) —
Gate Charge (Qg) 4 nC at VGS=12 V —
Gate-Source Voltage (VGS) Recommended 12 V —
Integrated Features ICeGaN® Gate, Current Sense, NL³ Circuit —
Operating Mode Enhancement-mode (normally-off) Enhancement-mode (normally-off)
Paket 16-DFN (8x8 mm) 16-pin DFN 8x8 mm
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 °C to +150 °C —
Gaya Mounting SMD/SMT —
Application Target AC-DC PFC, server SMPS, EV charging, motor drive —
RoHS / Lead-Free RoHS Compliant, Lead-Free (per distributor listing) —
Manufacturer — Cambridge GaN Devices
Technology — GaN-on-Si HEMT (enhancement mode)
Drain-to-Source Voltage (VDS) — 650 V
On-Resistance (RDS(on)) — 55 mΩ
Arus Alir Berlanjut (TC=25°C) — 27 A
Gate Technology — ICeGaN™ (standard-driver compatible)
Current Sense Pin — Yes (integrated CS output)
Integrated Protection Circuit — NL³ (non-linear low-loss)
Reverse Recovery Charge (Qrr) — 0 nC (zero, typical for GaN)
Channel Type — N-Channel
Status RoHS — Compliant (lead-free)

Spek dan Sumber

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