CGD65B130S2 vs CGD65B130SH2 Perbandingan

Perbandingan bersamaan detil CGD65B130S2 dari Cambridge GaN Devices dan CGD65B130SH2 dari Cambridge GaN Devices. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Cambridge GaN Devices
CGD65B130S2 CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices

CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices

CGD65B130S2 ✓ Aktif
Cambridge GaN Devices
CGD65B130SH2 CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN

CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN

CGD65B130SH2 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum CGD65B130S2 CGD65B130SH2
Merek Cambridge GaN Devices Cambridge GaN Devices
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Cambridge GaN Devices Cambridge GaN Devices
Tipe Transistor GaN HEMT (enhancement mode, N-channel) N-Channel GaN HEMT (Enhancement Mode)
Drain-Source Voltage (VDS) 650 V 650 V
On-Resistance (RDS(on)) 130 mΩ (typical) —
Continuous Drain Current (ID) 12 A —
Gate Technology ICeGaN™ (standard-driver compatible) —
Reverse Recovery Charge (Qrr) 0 nC (zero) —
Paket 8-DFN 5x6 mm with exposed thermal pad 8-DFN (5x6 mm), Surface Mount
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55 °C to +150 °C (junction) —
Gate Charge (Qg) [DATA_NEEDED: Qg total gate charge at VGS=10V] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Rise Time / Fall Time Sub-nanosecond (per datasheet typical application) —
Level MSL MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Substrate Technology GaN-on-silicon —
Part Number — CGD65B130SH2
Continuous Drain Current (ID) at 25°C — 12 A
On-Resistance RDS(on) (typical, per product page) — 55 mΩ
On-Resistance RDS(on) (max at 900 mA / 12 V) — 182 mΩ
On-Resistance Range (datasheet) — 130 to 350 mΩ
Gate Threshold Voltage VGS(th) — 2.2 V to 4.2 V
Total Gate Charge Qg — 1.9 nC
Technology — GaN-on-silicon (ICeGaN®)
Integrated Features — ICeGaN® gate, Current Sense, NL³ protection circuit
Operating Mode — Enhancement-mode (normally-off)
Compliance / RoHS — Compliant (per DigiKey listing)

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