CGD65B130S2 vs CGD65B130SH2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci CGD65B130S2 disebabkan oleh Cambridge GaN Devices dan CGD65B130SH2 disebabkan oleh Cambridge GaN Devices. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Cambridge GaN Devices
CGD65B130S2 CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices

CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices

CGD65B130S2 ✓ Aktif
Cambridge GaN Devices
CGD65B130SH2 CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN

CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN

CGD65B130SH2 ✓ Aktif

Pengandingan Spesifikasi

Parametr CGD65B130S2 CGD65B130SH2
Merek Cambridge GaN Devices Cambridge GaN Devices
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Cambridge GaN Devices Cambridge GaN Devices
Jenis Transistor GaN HEMT (enhancement mode, N-channel) N-Channel GaN HEMT (Enhancement Mode)
Drain-Source Voltage (VDS) 650 V 650 V
On-Resistance (RDS(on)) 130 mΩ (typical) —
Continuous Drain Current (ID) 12 A —
Gate Technology ICeGaN™ (standard-driver compatible) —
Reverse Recovery Charge (Qrr) 0 nC (zero) —
Kemasan 8-DFN 5x6 mm with exposed thermal pad 8-DFN (5x6 mm), Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55 °C to +150 °C (junction) —
Gate Charge (Qg) [DATA_NEEDED: Qg total gate charge at VGS=10V] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Rise Time / Fall Time Sub-nanosecond (per datasheet typical application) —
Aras MSL MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant —
Substrate Technology GaN-on-silicon —
Part Number — CGD65B130SH2
Continuous Drain Current (ID) at 25°C — 12 A
On-Resistance RDS(on) (typical, per product page) — 55 mΩ
On-Resistance RDS(on) (max at 900 mA / 12 V) — 182 mΩ
On-Resistance Range (datasheet) — 130 to 350 mΩ
Gate Threshold Voltage VGS(th) — 2.2 V to 4.2 V
Total Gate Charge Qg — 1.9 nC
Technology — GaN-on-silicon (ICeGaN®)
Integrated Features — ICeGaN® gate, Current Sense, NL³ protection circuit
Operating Mode — Enhancement-mode (normally-off)
Compliance / RoHS — Compliant (per DigiKey listing)

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