CGD65B130S2 vs CGD65B130SH2 Karşılaştırma

Ayrıntılı yan yana karşılaştırma CGD65B130S2 tarafından Cambridge GaN Devices ve CGD65B130SH2 tarafından Cambridge GaN DevicesAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Cambridge GaN Devices
CGD65B130S2 CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices

CGD65B130S2 - 650V 130mΩ GaN HEMT | Cambridge GaN Devices

CGD65B130S2 ✓ Aktif
Cambridge GaN Devices
CGD65B130SH2 CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN

CGD65B130SH2 - 650V, 12A GaN HEMT, 8-DFN | Cambridge GaN

CGD65B130SH2 ✓ Aktif

Özellik Karşılaştırması

Parametre CGD65B130S2 CGD65B130SH2
Marka Cambridge GaN Devices Cambridge GaN Devices
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Cambridge GaN Devices Cambridge GaN Devices
Transistor Türü GaN HEMT (enhancement mode, N-channel) N-Channel GaN HEMT (Enhancement Mode)
Drain-Source Voltage (VDS) 650 V 650 V
On-Resistance (RDS(on)) 130 mΩ (typical) —
Continuous Drain Current (ID) 12 A —
Gate Technology ICeGaN™ (standard-driver compatible) —
Reverse Recovery Charge (Qrr) 0 nC (zero) —
Paket 8-DFN 5x6 mm with exposed thermal pad 8-DFN (5x6 mm), Surface Mount
Montaj Türü Surface Mount Surface Mount
İşletim Sıcaklığı -55 °C to +150 °C (junction) —
Gate Charge (Qg) [DATA_NEEDED: Qg total gate charge at VGS=10V] —
Input Capacitance (Ciss) [DATA_NEEDED: input capacitance] —
Output Capacitance (Coss) [DATA_NEEDED: output capacitance] —
Rise Time / Fall Time Sub-nanosecond (per datasheet typical application) —
MSL Seviyesi MSL 1 (per JEDEC J-STD-020) —
RoHS Durumu Compliant —
Substrate Technology GaN-on-silicon —
Part Number — CGD65B130SH2
Continuous Drain Current (ID) at 25°C — 12 A
On-Resistance RDS(on) (typical, per product page) — 55 mΩ
On-Resistance RDS(on) (max at 900 mA / 12 V) — 182 mΩ
On-Resistance Range (datasheet) — 130 to 350 mΩ
Gate Threshold Voltage VGS(th) — 2.2 V to 4.2 V
Total Gate Charge Qg — 1.9 nC
Technology — GaN-on-silicon (ICeGaN®)
Integrated Features — ICeGaN® gate, Current Sense, NL³ protection circuit
Operating Mode — Enhancement-mode (normally-off)
Compliance / RoHS — Compliant (per DigiKey listing)

Dökümanlar & Kaynaklar

Tüm Ürünleri Gözden Geçir BOM Oluştur Teklif İsteyin