CGD65B130S2 vs CGD65B130SH2 比較
詳細並排比較 CGD65B130S2 由 Cambridge GaN Devices 與 CGD65B130SH2 由 Cambridge GaN Devices. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | CGD65B130S2 | CGD65B130SH2 |
|---|---|---|
| 品牌 | Cambridge GaN Devices | Cambridge GaN Devices |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Cambridge GaN Devices | Cambridge GaN Devices |
| 電晶體類型 | GaN HEMT (enhancement mode, N-channel) | N-Channel GaN HEMT (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| On-Resistance (RDS(on)) | 130 mΩ (typical) | — |
| Continuous Drain Current (ID) | 12 A | — |
| Gate Technology | ICeGaN™ (standard-driver compatible) | — |
| Reverse Recovery Charge (Qrr) | 0 nC (zero) | — |
| 封裝 | 8-DFN 5x6 mm with exposed thermal pad | 8-DFN (5x6 mm), Surface Mount |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 °C to +150 °C (junction) | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg total gate charge at VGS=10V] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: output capacitance] | — |
| Rise Time / Fall Time | Sub-nanosecond (per datasheet typical application) | — |
| MSL 等級 | MSL 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | — |
| Substrate Technology | GaN-on-silicon | — |
| Part Number | — | CGD65B130SH2 |
| Continuous Drain Current (ID) at 25°C | — | 12 A |
| On-Resistance RDS(on) (typical, per product page) | — | 55 mΩ |
| On-Resistance RDS(on) (max at 900 mA / 12 V) | — | 182 mΩ |
| On-Resistance Range (datasheet) | — | 130 to 350 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2.2 V to 4.2 V |
| Total Gate Charge Qg | — | 1.9 nC |
| Technology | — | GaN-on-silicon (ICeGaN®) |
| Integrated Features | — | ICeGaN® gate, Current Sense, NL³ protection circuit |
| Operating Mode | — | Enhancement-mode (normally-off) |
| Compliance / RoHS | — | Compliant (per DigiKey listing) |