EP3SE260F1152C4N vs EP3SE260F1152C3N Perbandingan

Perbandingan bersamaan detil EP3SE260F1152C4N dari Intel dan EP3SE260F1152C3N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum EP3SE260F1152C4N EP3SE260F1152C3N
Merek Intel Intel
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Obsolete Aktif
Series Stratix III E Stratix III E
Family Stratix III (Enhanced) —
Logic Elements (LEs) 255,000 —
Embedded Memory 16,672,768 bits (16.67 Mbit) —
Maximum User I/Os 744 —
Number of LABs/CLBs 10,200 —
DSP / 18x18 Multipliers 768 embedded multipliers —
Process Technology 65 nm CMOS 65 nm
Core Voltage 1.1 V 1.1 V
Maximum Operating Frequency 450 MHz —
Paket 1152-ball FC-FBGA (flip-chip) 1152-BBGA, FCBGA
Speed Grade -4 (commercial temperature) —
Suhu Kerja 0C to +85C (commercial, 'C' suffix) 0 C to +85 C (Commercial)
Tipe Mounting Surface Mount (BGA) Surface Mount
Packaging Tray —
Lead-Free / RoHS Lead-free finish (RoHS compliant per distributor listing) —
Tipe Memori SRAM-based, volatile (requires configuration device) —
Configuration External EPCS / enhanced configuration via AS, PS, JTAG, or FPP —
Product Status Obsolete (per Xecor cross-reference data) —
Logic Elements / Cells — 255,000
Embedded Memory Bits — 16,672,768 bits
Logic Array Blocks (LABs) — 10,200
User I/O Count — 744
Transceivers — Integrated high-speed transceivers
DSP Blocks — Yes (dedicated multiplier/accumulator)
Embedded Memory Type — TriMatrix (true dual-port, FIFO, ROM, RAM)
External Memory Support — DDR3, DDR2, QDR II+, RLDRAM II
Configuration Modes — AS, AP, PS, FPP, JTAG
Partial Reconfiguration — Supported
Programmable Power Technology — Yes (up to 50% dynamic power reduction)
Status RoHS — Compliant

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