EP3SE260F1152C4N vs EP3SE260F1152C3N 比較

詳細並排比較 EP3SE260F1152C4N 由 Intel 與 EP3SE260F1152C3N 由 Intel. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 EP3SE260F1152C4N EP3SE260F1152C3N
品牌 Intel Intel
類別 FPGA & CPLD FPGA & CPLD
生命週期狀態 Obsolete 啟用中
Series Stratix III E Stratix III E
Family Stratix III (Enhanced) —
Logic Elements (LEs) 255,000 —
Embedded Memory 16,672,768 bits (16.67 Mbit) —
Maximum User I/Os 744 —
Number of LABs/CLBs 10,200 —
DSP / 18x18 Multipliers 768 embedded multipliers —
Process Technology 65 nm CMOS 65 nm
Core Voltage 1.1 V 1.1 V
Maximum Operating Frequency 450 MHz —
封裝 1152-ball FC-FBGA (flip-chip) 1152-BBGA, FCBGA
Speed Grade -4 (commercial temperature) —
工作溫度 0C to +85C (commercial, 'C' suffix) 0 C to +85 C (Commercial)
安裝類型 Surface Mount (BGA) Surface Mount
Packaging Tray —
Lead-Free / RoHS Lead-free finish (RoHS compliant per distributor listing) —
記憶體類型 SRAM-based, volatile (requires configuration device) —
Configuration External EPCS / enhanced configuration via AS, PS, JTAG, or FPP —
Product Status Obsolete (per Xecor cross-reference data) —
Logic Elements / Cells — 255,000
Embedded Memory Bits — 16,672,768 bits
Logic Array Blocks (LABs) — 10,200
User I/O Count — 744
Transceivers — Integrated high-speed transceivers
DSP Blocks — Yes (dedicated multiplier/accumulator)
Embedded Memory Type — TriMatrix (true dual-port, FIFO, ROM, RAM)
External Memory Support — DDR3, DDR2, QDR II+, RLDRAM II
Configuration Modes — AS, AP, PS, FPP, JTAG
Partial Reconfiguration — Supported
Programmable Power Technology — Yes (up to 50% dynamic power reduction)
RoHS 狀態 — Compliant

資料表與資源

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