EP3SE260F1517C3N vs EP3SE260F1517C4N Perbandingan
Perbandingan bersamaan detil EP3SE260F1517C3N dari Intel dan EP3SE260F1517C4N dari Intel. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | EP3SE260F1517C3N | EP3SE260F1517C4N |
|---|---|---|
| Merek | Intel | Intel |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Waktu Pembelian Terakhir | NRND |
| Family | Stratix III E | Field-Programmable Gate Array (FPGA) |
| Logic Elements | 254,400 | 255,000 |
| Embedded Memory | 16,672,768 bits (16.7 Mbits) | 16,672,768 bits |
| User I/Os | 976 | — |
| DSP Blocks (18x18 Multipliers) | 816 | — |
| M9K Memory Blocks | 1,040 | — |
| Maximum Transceiver Data Rate | 600 Mbps | 12.5 Gbps |
| PLLs | 4 | — |
| Global Clock Networks | 16 | — |
| Paket | 1517-BBGA (FCBGA) | 1517-BBGA, FCBGA |
| Process Technology | 65 nm TSMC low-power CMOS | — |
| Speed Grade | C3 (commercial) | — |
| Suhu Hubung Kerja | 0 C to +85 C (commercial) | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| External Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| Series | — | Stratix® III E |
| Logic Array Blocks (LABs) | — | 10,200 |
| Maximum User I/Os | — | 976 |
| Suhu Kerja | — | 0°C to 85°C |
| Core Voltage | — | 0.9 V |
| Process Node | — | 65 nm |
| Level MSL | — | [DATA_NEEDED: MSL level] |
| Lead Free | — | [DATA_NEEDED: lead-free status] |